Temperature uniformity over wafer surface within ± 2%.
Facility to store number of heating schedules / recipes
PC interface for data acquisition and processing.
Compact, double walled, water-cooled process chamber of ss304l / ss316.
Gas manifold for controlled inlet of reactive gases.
Gas flow dynamics designed for uniform laminar flow of reactive gases over wafer surface.
Rapid thermal processor is specifically designed to heat the silicon wafers to very high temperatures in short duration. the double walled water-cooled process chamber incorporates tungsten halogen lamp based modules to heat silicon wafer to 1200°c in less than 6 seconds. Quartz substrate holder is designed to hold silicon wafer with minimal contact to avoid heat loss. The ramp rates as high as 220°c/sec can be provided with temperature uniformity within ± 2%.
